SDT3A5N06-C pdf, SDT3A5N06-C подробное описание детали, SDT3A5N06-C датащи, SDT3A5N06-C view ::: ALLDATASHEET :::

номер детали	SDT3A5N06-C

подробное описание детали	3.5A, 60V, RDS(on) 100 m(ohm) N-Channel Enhancement Mode Power MOSFET

объем файла	338.4 Kbytes

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производитель	SECOS [SeCoS Halbleitertechnologie GmbH]

домашняя страница	http://www.secosgmbh.com

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Аналогичный номер детали - SDT3A5N06-C

производитель	номер детали	датащи	подробное описание детали
Diodes Incorporated	SDT3A40SAFS	436Kb / 5P	3A TRENCH SCHOTTKY BARRIER RECTIFIER SMA-FS March 2021 Rev. 3 - 2
	SDT3A40SAFS-13	436Kb / 5P	3A TRENCH SCHOTTKY BARRIER RECTIFIER SMA-FS March 2021 Rev. 3 - 2
	SDT3A45SA	498Kb / 5P	3A TRENCH SCHOTTKY BARRIER RECTIFIER SMA May 2017 Rev. 2 - 2
	SDT3A45SA-13	498Kb / 5P	3A TRENCH SCHOTTKY BARRIER RECTIFIER SMA May 2017 Rev. 2 - 2
	SDT3A45SAF	445Kb / 5P	3A TRENCH SCHOTTKY BARRIER RECTIFIER SMAF December 2019 Rev. 3 - 2

производитель	номер детали	датащи	подробное описание детали
SeCoS Halbleitertechnol...	SGM0410	1Mb / 4P	3.5A , 100V , RDS(ON) 170 m N-Channel Enhancement Mode Power MOSFET
	SMG2334NE	297Kb / 4P	3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement MOSFET
	SSE90N06-10P	617Kb / 4P	90A , 60V , RDS(ON) 9.9 m N-Channel Enhancement Mode MOSFET
	SST3585	654Kb / 7P	3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
	STT3458N	425Kb / 4P	3.4A , 60V , RDS(ON) 92 m N-Channel Enhancement Mode Mos.FET
	STT3585	664Kb / 7P	3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
	STT3962NE	104Kb / 2P	2.3A , 60V , RDS(ON) 0.153 N-Channel Enhancement Mode MOSFET
	S2N7002SW	752Kb / 4P	0.38A, 60V, RDS(O) 2.8 ohm N-Channel Enhancement Mode Power MOSFET
	SDT3N03	343Kb / 4P	3.5A, 30V, RDS(ON) 55 m(ohm) Dual-N Enhancement Mode MOSFET
	SDT6N06-C	617Kb / 4P	6A, 60V, RDS(on) 44 m(ohm) N-Channel Enhancement Mode Power MOSFET