NE202 pdf, NE202 подробное описание детали, NE202 датащи, NE202 view ::: ALLDATASHEET :::

номер детали	NE202

подробное описание детали	ULTRA LOW NOISE K BAND HETERO JUNCTION FET

объем файла	329.07 Kbytes

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производитель	NEC [NEC]

домашняя страница	http://www.nec.com/

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Аналогичный номер детали - NE202

производитель	номер детали	датащи	подробное описание детали
Renesas Technology Corp	NE20200	570Kb / 8P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1988
Renesas Technology Corp	NE202930	217Kb / 8P	Silicon NPN Epitaxial High Frequency Transistor
California Eastern Labs	NE202930	571Kb / 7P	Silicon NPN Epitaxial High Frequency Transistor
Renesas Technology Corp	NE202930-T1	217Kb / 8P	Silicon NPN Epitaxial High Frequency Transistor
California Eastern Labs	NE202930-T1	571Kb / 7P	Silicon NPN Epitaxial High Frequency Transistor

производитель	номер детали	датащи	подробное описание детали
NEC	NE32000	247Kb / 7P	LOW COSET LOW NOISE K-BAND HETERO JUNCTION FET
TriQuint Semiconductor	TGA4506	124Kb / 9P	K Band Low Noise Amplifier
TriQuint Semiconductor	TGA4506-SM	117Kb / 10P	K Band Packaged Low Noise Amplifier
California Eastern Labs	NE3514S02	269Kb / 8P	K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
California Eastern Labs	NE350184C	269Kb / 8P	HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Renesas Technology Corp	NE3517S03	208Kb / 11P	K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET
California Eastern Labs	NE3517S03	310Kb / 8P	K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET
Renesas Technology Corp	NE3514S02	202Kb / 11P	K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Renesas Technology Corp	NE3517S03	208Kb / 11P	K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET
TriQuint Semiconductor	TGA4506	663Kb / 10P	K Band Low Noise Amplifier