| производитель | номер детали | датащи | подробное описание детали |
NTE Electronics |
NTE222
|
24Kb / 2P |
Field Effect Transistor Dual Gate N-Channel MOSFET
|
InterFET Corporation |
2N3958
|
66Kb / 1P |
N-Channel Dual Silicon Junction Field-Effect Transistor
|
Intersil Corporation |
3N200
|
383Kb / 6P |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR
|
List of Unclassifed Man... |
3N142
|
278Kb / 5P |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR
|
|
3N153
|
148Kb / 3P |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR
|
GE Solid State |
3N206
|
363Kb / 8P |
Silicon Dual Insulated-Gate Field-Effect Transistors
|
NTE Electronics |
NTE455
|
79Kb / 2P |
N−Channel Silicon Dual−Gate MOS Field Effect Transistor
|
New Jersey Semi-Conduct... |
3N128
|
153Kb / 1P |
N-CHANNEL INSULATED-GATE DEPLETION-TYPE FIELD-EFFECT TRANSISTOR
|
InterFET Corporation |
2N3957
|
72Kb / 1P |
N-Channel Dual Silicon Junction Field-Effect Transistor
|
List of Unclassifed Man... |
3SK40
|
70Kb / 1P |
N-CHANNEL SILICON CUAL-GATE MOS FIELD-EFFECT TRANSISTOR
|
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