DFE201612E pdf, DFE201612E подробное описание детали, DFE201612E датащи, DFE201612E view ::: ALLDATASHEET :::

Аналогичный номер детали - DFE201612E

производитель	номер детали	датащи	подробное описание детали
TOKO, Inc	DFE201612E-1R0M	226Kb / 1P	Metal Alloy Inductors
Murata Manufacturing Co...	DFE201612E-1R0M	982Kb / 2P	Inductor
	DFE201612E-1R0M	2Mb / 2P	Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
	DFE201612E-1R0M#	2Mb / 2P	Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
	DFE201612E-1R0M	2Mb / 2P	Rated current (Isat) is specified when the decrease of the initial inductance value at 30%

производитель	номер детали	датащи	подробное описание детали
Motorola, Inc	MTW16N40E	217Kb / 8P	TMOS POWER FET 16 AMPERES 400 VOLTS RDS(on) = 0.24 OHM
Intersil Corporation	FRM240D	47Kb / 6P	16A, 200V, 0.24 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998
Fairchild Semiconductor	FDP19N40	264Kb / 9P	N-Channel MOSFET 400V, 19A, 0.24廓
ON Semiconductor	MUN2132	145Kb / 12P	Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k September, 2012 ??Rev. 1
ON Semiconductor	MUN2232	140Kb / 12P	Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k August, 2012 ??Rev. 0
Fairchild Semiconductor	FDP19N40	232Kb / 8P	N-Channel MOSFET 400V, 19A, 0.24廓
TOKO, Inc	DEM4514C	111Kb / 1P	Inductance Range: 1.2~33?쵩 (DEM4514C), 1.2~22 H (DEM4518C)
Ningbo Foryard Optoelec...	FYT-2431AX-XX	405Kb / 5P	0.24 Inch (6.00mm) digit height Single Digit Display
ON Semiconductor	MUN2132	148Kb / 12P	Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 kA March, 2013 ??Rev. 2
Kemet Corporation	C2220C244KDRLCAUTO	60Kb / 1P	KONNEKT Auto X7R, Ceramic, 0.24 uF, 10%, 1000 VDC, X7R