| производитель | номер детали | датащи | подробное описание детали |
 Toshiba Semiconductor |
CBS05F30
|
178Kb / 4P |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
|
|
1SS374
|
212Kb / 3P |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
|
|
1SS383
|
283Kb / 3P |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
|
|
1SS385FV
|
238Kb / 3P |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
|
|
1SS389
|
212Kb / 3P |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
|
|
1SS391
|
204Kb / 3P |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
|
|
1SS396
|
326Kb / 3P |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
|
|
CMS15
|
179Kb / 5P |
TOSHIBA Schottky Barrier Diode
|
|
CMS17
|
178Kb / 5P |
TOSHIBA Schottky Barrier Diode
|
|
CRS12
|
152Kb / 5P |
TOSHIBA Schottky Barrier Diode
|