| производитель | номер детали | датащи | подробное описание детали |
Cree, Inc |
CGHV27200
|
696Kb / 11P |
200 W, 2500-2700 MHz, GaN HEMT for LTE
Rev 0.1 |
|
CGH21120F
|
1Mb / 13P |
120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX
Rev 3.1 |
|
CGH21240F
|
1Mb / 15P |
240 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX
Rev 3.0 |
|
CGH25120F
|
1Mb / 12P |
120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE
Rev 3.1 |
|
CGHV22200
|
1Mb / 13P |
200 W, 1800-2200 MHz, GaN HEMT for LTE
Rev 1.0 |
|
CGHV27100
|
1Mb / 11P |
100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE
Rev 1.0 |
|
CGHV27200
|
1Mb / 12P |
200 W, 2500-2700 MHz, GaN HEMT for LTE
Rev 1.0 |
NXP Semiconductors |
A2G22S160-01SR3
|
761Kb / 18P |
1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR
Rev. 1, 01/2022 |
WOLFSPEED, INC. |
CGH25120F
|
3Mb / 12P |
120 W, 2.3-2.7 GHz, GaN HEMT for WiMAX and LTE
Rev. 3.4, 10-20-2022 |
|
CGHV14500
|
3Mb / 20P |
500 W, DC - 1800 MHz, GaN HEMT for L-Band Radar Systems
Rev. 5.0, 2022-7-27 |
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