| производитель | номер детали | датащи | подробное описание детали |
 Infineon Technologies A... |
IKB06N60T
|
658Kb / 13P |
IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Rev. 2.5 20.09.2013 |
|
IKP15N60T
|
516Kb / 13P |
IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Rev. 2.5 11.05.2015 |
|
IKP20N60T
|
505Kb / 13P |
IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Rev. 2.8 18.05.2015 |
|
IKW30N60T
|
506Kb / 13P |
IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Rev. 2.6 19.05.2015 |
|
IKA06N60T
|
520Kb / 13P |
IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Rev. 2.5 20.09.2013 |
|
IKA10N60T
|
515Kb / 13P |
IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Rev. 2.5 20.09.2013 |
|
IKA15N60T
|
570Kb / 13P |
IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Rev. 2.5 20.09.2013 |
|
IKB10N60T
|
643Kb / 13P |
IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Rev. 2.6 11.05.2015 |
|
IKB15N60T
|
702Kb / 13P |
IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Rev. 2.8 11.05.2015 |
|
IKB20N60T
|
703Kb / 13P |
IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Rev. 2.6 20.09.2013 |