NE5820M53_15 pdf, NE5820M53_15 подробное описание детали, NE5820M53_15 датащи, NE5820M53

номер детали	NE5820M53

подробное описание детали	P-channel MOS Field Effect Transistor for Impedance Converter of Microphone

объем файла	194.27 Kbytes

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производитель	RENESAS [Renesas Technology Corp]

домашняя страница	http://www.renesas.com

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Аналогичный номер детали - NE5820M53_15

производитель	номер детали	датащи	подробное описание детали
Renesas Technology Corp	NE5820M53-T1	182Kb / 8P	P-channel MOS Field Effect Transistor for Impedance Converter of Microphone
California Eastern Labs	NE5820M53-T1	1Mb / 8P	P-channel MOS Field Effect Transistor for Impedance Converter of Microphone
California Eastern Labs	NE5820M53-T1-A	1Mb / 8P	P-channel MOS Field Effect Transistor for Impedance Converter of Microphone

производитель	номер детали	датащи	подробное описание детали
NEC	2SK2552B	124Kb / 5P	N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
	2SK3230B	123Kb / 5P	N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
	2SK3717	43Kb / 4P	N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
	2SK3719	116Kb / 5P	N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
	2SK3782	111Kb / 5P	N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
	2SK3783	111Kb / 5P	N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
	2SK3230	50Kb / 8P	N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
Renesas Technology Corp	NE5820M53	182Kb / 8P	P-channel MOS Field Effect Transistor for Impedance Converter of Microphone
California Eastern Labs	NE5820M53	1Mb / 8P	P-channel MOS Field Effect Transistor for Impedance Converter of Microphone
Renesas Technology Corp	2SK2552	120Kb / 6P	N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM November 2004