NE5531079A pdf, NE5531079A подробное описание детали, NE5531079A датащи, NE5531079A view ::: ALLDATASHEET :::

номер детали	NE5531079A

подробное описание детали	7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS

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производитель	RENESAS [Renesas Technology Corp]

домашняя страница	http://www.renesas.com

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Аналогичный номер детали - NE5531079A

производитель	номер детали	датащи	подробное описание детали
California Eastern Labs	NE5531079A	382Kb / 8P	7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
	NE5531079A-A	382Kb / 8P	7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
	NE5531079A-T1	382Kb / 8P	7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
	NE5531079A-T1-A	382Kb / 8P	7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
	NE5531079A-T1A	382Kb / 8P	7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS

производитель	номер детали	датащи	подробное описание детали
NEC	5510279A	390Kb / 4P	3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
	NE5511279A-T1	99Kb / 3P	NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
	NE5510279A	39Kb / 5P	3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
	NE552R679A	68Kb / 9P	3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
California Eastern Labs	NE5510179A	42Kb / 4P	3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
	NE5510279A	42Kb / 5P	3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
	NE5511279A	296Kb / 4P	7.5 V UHF BAND RF POWER SILICON LD-MOS FET
	NE5531079A	382Kb / 8P	7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
	NE5511279A-A	297Kb / 4P	NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
	NE552R479A-T1-A	605Kb / 7P	3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS