NX8341 pdf, NX8341 подробное описание детали, NX8341 датащи, NX8341 view ::: ALLDATASHEET :::

номер детали	NX8341

подробное описание детали	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

объем файла	372.08 Kbytes

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производитель	CEL [California Eastern Labs]

домашняя страница	http://www.cel.com

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Аналогичный номер детали - NX8341

производитель	номер детали	датащи	подробное описание детали
California Eastern Labs	NX8341	351Kb / 13P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Renesas Technology Corp	NX8341	287Kb / 14P	LASER DIODE 2008
California Eastern Labs	NX8341TB-AZ	351Kb / 13P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8341TJ-AZ	351Kb / 13P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8341TL-AZ	351Kb / 13P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

производитель	номер детали	датащи	подробное описание детали
California Eastern Labs	NX8341	351Kb / 13P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NEC	NX8346TB	102Kb / 9P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NEC	NX8346TS	89Kb / 8P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Renesas Technology Corp	NX8346TS	172Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Renesas Technology Corp	NX8369TB	213Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
California Eastern Labs	NX8369TB	214Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8346TS	195Kb / 8P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8346TB	205Kb / 9P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Renesas Technology Corp	NX8349YK	253Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Renesas Technology Corp	NX8349TB	204Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION