RC2012F510CS pdf, RC2012F510CS подробное описание детали, RC2012F510CS датащи, RC2012F510CS view ::: ALLDATASHEET :::

номер детали	RC2012F510CS

подробное описание детали	Owing to the reduced lead inductance, the high frequency characteristic is excellent.

объем файла	791.37 Kbytes

Html View	1 2

производитель	SAMSUNG [Samsung semiconductor]

домашняя страница	http://www.samsung.com/Products/Semiconductor

Logo

Аналогичный номер детали - RC2012F510CS

производитель	номер детали	датащи	подробное описание детали
Samsung semiconductor	RC2012F1002CS	178Kb / 5P	Thick Film General Chip Resistors
Samsung semiconductor	RC2012F1003CS	82Kb / 2P	Samsung electro-mechanics
List of Unclassifed Man...	RC2012F100AS	167Kb / 12P	THICK FILM CHIP RESISTORS
	RC2012F100BS	167Kb / 12P	THICK FILM CHIP RESISTORS
	RC2012F100CS	167Kb / 12P	THICK FILM CHIP RESISTORS

производитель	номер детали	датащи	подробное описание детали
ice Components, Ins.	IN08034	37Kb / 2P	Isat is the current at which the inductance drops by 15%.
	IN08035	37Kb / 2P	Isat is the current at which the inductance drops by 15%.
	IN08052	37Kb / 2P	Isat is the current at which the inductance drops by 15%.
	IN08070	56Kb / 2P	Isat is the current at which the inductance drops by 20%.
	IN08106	37Kb / 2P	Isat is the current at which the inductance drops by 20%.
	IN08124	35Kb / 2P	Isat is the current at which the inductance drops by 20%.
	IN08127	37Kb / 2P	Isat is the current at which the inductance drops by 15%.
	IN08137	36Kb / 2P	Isat is the current at which the inductance drops by 20%.
	IN08144	35Kb / 2P	Isat is the current at which the inductance drops by 20%.
	IN09004	36Kb / 2P	Isat is the current at which the inductance drops by 15%.