NE85634 pdf, NE85634 подробное описание детали, NE85634 датащи, NE85634 view ::: ALLDATASHEET :::

номер детали	NE85634

подробное описание детали	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

объем файла	216.06 Kbytes

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производитель	CEL [California Eastern Labs]

домашняя страница	http://www.cel.com

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Аналогичный номер детали - NE85634

производитель	номер детали	датащи	подробное описание детали
NEC	NE85634	257Kb / 25P	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
California Eastern Labs	NE85634-T1	831Kb / 26P	NPN SILICON HIGH FREQUENCY TRANSISTOR
celduc-relais	NE85634-T1	832Kb / 26P	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
California Eastern Labs	NE85634-T1-A	831Kb / 26P	NPN SILICON HIGH FREQUENCY TRANSISTOR
celduc-relais	NE85634-T1-A	832Kb / 26P	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

производитель	номер детали	датащи	подробное описание детали
NEC	2SC3663	110Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
	2SC5432	59Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
	2SC5433	59Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
	2SC5434	61Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
	2SC5435	59Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Renesas Technology Corp	2SC3355	248Kb / 10P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
	2SC2570A	293Kb / 10P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
	2SC4093	175Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
	2SC5013	190Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
	2SC5432	314Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION February 2002