| производитель | номер детали | датащи | подробное описание детали |
 Fairchild Semiconductor |
FDB8870
|
223Kb / 11P |
N-Channel PowerTrench짰 MOSFET 30V, 160A, 3.9m廓
|
|
FDD8870_F085
|
319Kb / 11P |
N-Channel PowerTrench짰 MOSFET 30V, 160A, 3.9m廓
|
 Renesas Technology Corp |
RJK03M0DPA
|
173Kb / 7P |
30V, 65A, 1.9m廓max N Channel Power MOS FET
|
|
RJK03M1DPA
|
143Kb / 7P |
30V, 50A, 2.3m廓max.N Channel Power MOS FET
|
|
RJK03M4DPA
|
157Kb / 7P |
30V, 35A, 4.6m廓max.N Channel Power MOS FET
|
|
RJK0301DPB-02
|
136Kb / 7P |
30V, 60A, 2.8m廓 max. Silicon N Channel Power MOS FET Power Switching
|
|
RJK0305DPB-02
|
170Kb / 7P |
30V, 30A, 8.0m廓max Silicon N Channel Power MOS FET Power Switching
|
|
RJK0659DPA
|
166Kb / 7P |
60V, 30A, 8.0m廓 max.N Channel Power MOS FET High Speed Power Switching
|
|
RJK0660DPA
|
166Kb / 7P |
60V, 40A, 5.1m廓 max. N Channel Power MOS FET High Speed Power Switching
|
|
RJK03M3DPA
|
190Kb / 7P |
30V, 40A, 3.9m廓max. N Channel Power MOS FET High Speed Power Switching
|