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STN4416 датащи (PDF) - Stanson Technology

номер детали	STN4416

подробное описание детали	STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

объем файла	966.91 Kbytes

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производитель	STANSON [Stanson Technology]

домашняя страница	http://www.stansontech.com

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STN4416 датащи (PDF) - Stanson Technology

Аналогичный номер детали - STN4416

производитель	номер детали	датащи	подробное описание детали
Stanson Technology	STN4412	489Kb / 6P	N Channel Enhancement Mode MOSFET
Stanson Technology	STN4412S8RG	489Kb / 6P	N Channel Enhancement Mode MOSFET
VBsemi Electronics Co.,...	STN4412S8RG	1Mb / 9P	N-Channel 20V (D-S) MOSFET
Stanson Technology	STN4412S8TG	489Kb / 6P	N Channel Enhancement Mode MOSFET

Аналогичное описание - STN4416

производитель	номер детали	датащи	подробное описание детали
Stanson Technology	ST2304SRG	630Kb / 6P	ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	ST3406SRG	325Kb / 6P	ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN1810	966Kb / 7P	STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4346	352Kb / 7P	STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4392	383Kb / 7P	STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4426	362Kb / 6P	STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4438	269Kb / 6P	STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4480	742Kb / 6P	STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4546	363Kb / 6P	STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4850	532Kb / 6P	STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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