2SC3357-T1 pdf, 2SC3357-T1 подробное описание детали, 2SC3357-T1 датащи, 2SC3357-T1 view ::: ALLDATASHEET :::

номер детали	2SC3357-T1

подробное описание детали	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD

объем файла	218.19 Kbytes

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производитель	RENESAS [Renesas Technology Corp]

домашняя страница	http://www.renesas.com

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Аналогичный номер детали - 2SC3357-T1

производитель	номер детали	датащи	подробное описание детали
California Eastern Labs	2SC3357-T1-A	216Kb / 6P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

производитель	номер детали	датащи	подробное описание детали
Renesas Technology Corp	2SC4226-T1-A	149Kb / 8P	NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold
California Eastern Labs	NE68539	727Kb / 5P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
California Eastern Labs	2SC3356	1Mb / 9P	NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold
Renesas Technology Corp	2SC4093	175Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD
	2SC4227	202Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD
	2SC4228	202Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD
	2SC4536	181Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD
	2SC4957	189Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD
	2SC5011	190Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
	2SC5012	190Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD