2SC3355-T pdf, 2SC3355-T подробное описание детали, 2SC3355-T датащи, 2SC3355-T view ::: ALLDATASHEET :::

номер детали	2SC3355-T

подробное описание детали	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

объем файла	293.26 Kbytes

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производитель	RENESAS [Renesas Technology Corp]

домашняя страница	http://www.renesas.com

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Аналогичный номер детали - 2SC3355-T

производитель	номер детали	датащи	подробное описание детали
Renesas Technology Corp	2SC3355-T	248Kb / 10P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Unisonic Technologies	2SC3355-T92-B	82Kb / 2P	HIGH FREQUENCY LOW NOISE AMPLIFIER
	2SC3355-T92-K	82Kb / 2P	HIGH FREQUENCY LOW NOISE AMPLIFIER
	2SC3355-T92-R	82Kb / 2P	HIGH FREQUENCY LOW NOISE AMPLIFIER

производитель	номер детали	датащи	подробное описание детали
NEC	2SC3663	110Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
	2SC5432	59Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
	2SC5433	59Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
	2SC5434	61Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
	2SC5435	59Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Renesas Technology Corp	2SC3355	248Kb / 10P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Renesas Technology Corp	2SC4093	175Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
California Eastern Labs	NE85634	216Kb / 6P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Renesas Technology Corp	2SC5013	190Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Renesas Technology Corp	2SC5432	314Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION February 2002