NX6411GH pdf, NX6411GH подробное описание детали, NX6411GH датащи, NX6411GH view ::: ALLDATASHEET :::

номер детали	NX6411GH

подробное описание детали	LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION

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производитель	RENESAS [Renesas Technology Corp]

домашняя страница	http://www.renesas.com

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Аналогичный номер детали - NX6411GH

производитель	номер детали	датащи	подробное описание детали
California Eastern Labs	NX6411GH	190Kb / 7P	1 490 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
California Eastern Labs	NX6411GH-AZ	190Kb / 7P	1 490 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
Renesas Technology Corp	NX6411GH	170Kb / 8P	LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION

производитель	номер детали	датащи	подробное описание детали
California Eastern Labs	NX5315EH	283Kb / 7P	1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
Renesas Technology Corp	NX6410GH	178Kb / 8P	LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
	NX6308GH	221Kb / 9P	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
	NX6309GH	221Kb / 9P	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
California Eastern Labs	NX6414EH	173Kb / 8P	LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE
Renesas Technology Corp	NX6410GH	170Kb / 8P	LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
	NX6411GH	170Kb / 8P	LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
	NX6308GH	221Kb / 9P	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
	NX6309GH	221Kb / 9P	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
	PL10692EJ03V0DS	221Kb / 9P	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION