| производитель | номер детали | датащи | подробное описание детали |
Hamamatsu Corporation |
S1722-02
|
96Kb / 2P |
Si PIN photodiode Large area, high-speed PIN photodiodes for UV to near IR photometry
|
|
S6337-01
|
97Kb / 2P |
Large area photodiode for UV to IR, precision photometry
|
|
S9251
|
75Kb / 2P |
Si APD High sensitivity in near IR range
|
Advanced Photonix, Inc. |
SD197-70-72-661
|
127Kb / 2P |
Cooled Large Area 5mm Red Enhanced Silicon APD Module
|
|
SD197-70-74-661
|
129Kb / 2P |
Cooled Large Area 5mm Blue Enhanced Silicon APD Module
|
Hamamatsu Corporation |
S11510
|
465Kb / 8P |
Enhanced near infrared sensitivity: QE=40% (貫=1000 nm)
|
|
S9972
|
458Kb / 10P |
CCD area image sensor Front-illuminated FFT-CCD, high near IR sensitivity
|
|
S10747-0909
|
486Kb / 7P |
Enhanced near-infrared sensitivity by using fully-depleted CCD technology
|
|
S12028_KPIN1083E01
|
575Kb / 3P |
Enhanced near IR sensitivity, using a MEMS
|
|
S11519
|
571Kb / 4P |
Enhanced near IR sensitivity, using a MEMS technology
|
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