SPA20N60C3 pdf, SPA20N60C3 подробное описание детали, SPA20N60C3 датащи, SPA20N60C3 view ::: ALLDATASHEET :::

номер детали	SPA20N60C3

подробное описание детали	New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

объем файла	1838.39 Kbytes

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производитель	INFINEON [Infineon Technologies AG]

домашняя страница	http://www.infineon.com

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Аналогичный номер детали - SPA20N60C3

производитель	номер детали	датащи	подробное описание детали
Infineon Technologies A...	SPA20N60C3	314Kb / 14P	Cool MOS Power Transistor 2003-10-08
Inchange Semiconductor ...	SPA20N60C3	313Kb / 2P	isc N-Channel MOSFET Transistor

производитель	номер детали	датащи	подробное описание детали
Infineon Technologies A...	SPN04N60S5	4Mb / 10P	New revolutionary high voltage technology Worldwide best RDS in SOT 223 Rev. 2.2 2005-02-21
	SPN02N60C3	2Mb / 11P	New revolutionary high voltage technology Ultra low gate charge Ultra low effective capacitances Rev. 2.3 2005-02-21
	SPP21N50C3	2Mb / 14P	New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Rev. 3.0 2007-08-30
	SPP20N65C3	1Mb / 15P	New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Rev. 3.0 2007-08-30
	SPB12N50C3	1Mb / 12P	New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Rev. 2.4 2005-11-07
	SPP17N80C3	1Mb / 13P	New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Rev. 2.6 2007-08-30
	SPP07N60C3	1Mb / 15P	New revolutionary high voltage technology Ultra low gate charge Rev. 3.1 2007-08-30
	SPP11N65C3	1,019Kb / 15P	New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Rev. 2.9 2007-08-30
	SPB11N60S5	691Kb / 11P	New revolutionary high voltage technology Ultra low gate charge Rev. 2.3 2005-07-22
	SPP04N50C3	635Kb / 13P	New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Rev. 2.8 2009-11-26