| производитель | номер детали | датащи | подробное описание детали |
Samsung semiconductor |
KSK123
|
83Kb / 3P |
N0CHANNEL JUNCTION FET (AF IMPEDANCE CONVERTER)
|
List of Unclassifed Man... |
RJN1164
|
175Kb / 4P |
N-Channel Junction FET
|
Sanyo Semicon Device |
2SK3796
|
46Kb / 4P |
N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier, Impedance Converter Applications
|
|
EC3A04B
|
50Kb / 4P |
N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier, Impedance Converter Applications
|
|
EC3A04B
|
52Kb / 4P |
N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier,Impedance Converter Applications
|
Panasonic Semiconductor |
DSKTJ05
|
445Kb / 3P |
Silicon N-channel junction FET For AF impedance converter
|
|
DSKTJ08
|
440Kb / 3P |
Silicon N-channel junction FET For AF impedance converter
|
Sanyo Semicon Device |
TF408
|
337Kb / 4P |
N-Channel Silicon Junction FET Low-Frequency General-Purpose Amplifi er, Impedance Converter Applications
|
|
TF410
|
318Kb / 3P |
N-Channel Silicon Junction FET Impedance Converter, Infrared Sensor Applications
|
|
2SK3738
|
474Kb / 6P |
N-Channel Junction Silicon FET Impedance Converter Applications
|
Russian ▼ 
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
