| производитель | номер детали | датащи | подробное описание детали |
 Motorola, Inc |
IRF530
|
157Kb / 2P |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
|
 STMicroelectronics |
IRF530
|
47Kb / 3P |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Jun-1988 |
 Transys Electronics |
IRF530
|
481Kb / 5P |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE
|
 Fairchild Semiconductor |
IRF530
|
180Kb / 6P |
N-Channel Power MOSFETs, 20 A, 60-100 V
|
 International Rectifier |
IRF530
|
175Kb / 6P |
Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A)
|