| производитель | номер детали | датащи | подробное описание детали |
Nexperia B.V. All right... |
BUK7V4R2-40H
|
311Kb / 13P |
Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration)
16 August 2022 |
|
BUK9K13-40H
|
311Kb / 12P |
Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D
11 February 2021 |
|
BUK9V13-40H
|
310Kb / 13P |
Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration)
11 February 2021 |
|
PSMN014-40HLD
|
287Kb / 12P |
N-channel 40 V, 13.6 mOhm, logic level MOSFET in LFPAK56D using NextPowerS3 technology
26 September 2022 |
|
PSMN6R1-40HL
|
340Kb / 12P |
N-channel 40 V, 7.2 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology
30 September 2022 |
|
PSMN6R8-40HS
|
286Kb / 12P |
N-channel 40 V, 6.8 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology
19 October 2022 |
|
PSMN8R0-40HL
|
345Kb / 12P |
N-channel 40 V, 9.4 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology
30 September 2022 |
|
PSMN8R5-40HS
|
341Kb / 12P |
N-channel 40 V, 8.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology
26 September 2022 |
|
PSMN4R2-40VSH
|
302Kb / 12P |
Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration)
16 August 2021 |
|
PSMN013-40VLD
|
301Kb / 12P |
Dual N-channel 40 V, 13 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration)
16 August 2021 |
Russian ▼ 
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand