| производитель | номер детали | датащи | подробное описание детали |
 Bourns Electronic Solut... |
CHF2010CNP
|
188Kb / 2P |
10 W Power RF Chip Termination
|
 California Eastern Labs |
NE650103M
|
259Kb / 7P |
10 W L & S-BAND POWER GaAs MESFET
|
 Cree, Inc |
CGH40010
|
948Kb / 12P |
10 W, RF Power GaN HEMT
Rev 1.4 |
|
CRF24010D
|
843Kb / 8P |
10 W SiC RF Power MESFET Die
Rev 1.5 |
|
CRF24060D
|
737Kb / 8P |
60 W SiC RF Power MESFET Die
Rev 1.1 |
|
CRF24060
|
637Kb / 10P |
60 W, SiC RF Power MESFET
Rev 1.2 |
 Bourns Electronic Solut... |
CHF2010XNP
|
217Kb / 2P |
Series 10 W Power RF Chip Termination/Resistor
|
|
CHF2010XNP
|
185Kb / 2P |
10 W Power RF Chip Termination/Resistor
|
 Cree, Inc |
CGH40010
|
1Mb / 15P |
10 W, RF Power GaN HEMT
Rev 4.0 |
 WOLFSPEED, INC. |
WSGPA01
|
712Kb / 7P |
10 W, 5 GHz, GaN on SiC General Purpose Power Amplifier
Rev. 02.1, 2021-07-13 |