| производитель | номер детали | датащи | подробное описание детали |
 ON Semiconductor |
NTH4L080N120SC1
|
419Kb / 8P |
MOSFET ??Power, N-Channel, Silicon Carbide, 1200 V, 80 m
December, 2019??Rev. 1 |
|
NTH4L080N120SC1
|
409Kb / 8P |
Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-4L
May, 2022 - Rev. 2 |
|
NTH4L080N120SC1
|
411Kb / 8P |
Silicon Carbide (SiC) MOSFET – EliteSiC, 80mohm, 1200V, M1, TO-247-4L
January, 2023 - Rev. 3 |
|
NTH4L080N120SC1
|
409Kb / 8P |
Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-4L
May, 2022 - Rev. 2 |
|
NTH4L080N120SC1
|
411Kb / 8P |
Silicon Carbide (SiC) MOSFET – EliteSiC, 80mohm, 1200V, M1, TO-247-4L
January, 2023 - Rev. 3 |