NE5511279A pdf, NE5511279A подробное описание детали, NE5511279A датащи, NE5511279A view ::: ALLDATASHEET :::

номер детали	NE5511279A

подробное описание детали	7.5 V UHF BAND RF POWER SILICON LD-MOS FET

объем файла	296.22 Kbytes

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производитель	CEL [California Eastern Labs]

домашняя страница	http://www.cel.com

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Аналогичный номер детали - NE5511279A

производитель	номер детали	датащи	подробное описание детали
NEC	NE5511279A	99Kb / 3P	NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
California Eastern Labs	NE5511279A	297Kb / 4P	NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
Renesas Technology Corp	NE5511279A	272Kb / 10P	SILICON POWER MOS FET 2003
California Eastern Labs	NE5511279A-A	297Kb / 4P	NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
NEC	NE5511279A-T1	99Kb / 3P	NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

производитель	номер детали	датащи	подробное описание детали
Mitsubishi Electric Sem...	2SK2974	29Kb / 3P	RF POWER MOS FET(VHF/UHF power amplifiers)
Mitsubishi Electric Sem...	2SK2975	29Kb / 3P	RF POWER MOS FET(VHF/UHF power amplifiers)
Hitachi Semiconductor	2SK3390	78Kb / 7P	Silicon N Channel MOS FET UHF Power Amplifier
NEC	NE5511279A-T1	99Kb / 3P	NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
Sanyo Semicon Device	2SK1739A	123Kb / 4P	RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER
Hitachi Semiconductor	PF0341A	47Kb / 12P	MOS FET Power Amplifier Module for UHF Band
NEC	NE552R679A	68Kb / 9P	3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
California Eastern Labs	NE5531079A	382Kb / 8P	7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
California Eastern Labs	NE5511279A-A	297Kb / 4P	NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
Renesas Technology Corp	NE5531079A	240Kb / 11P	7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS