NE5510179A pdf, NE5510179A подробное описание детали, NE5510179A датащи, NE5510179A view ::: ALLDATASHEET :::

номер детали	NE5510179A

подробное описание детали	3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS

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производитель	CEL [California Eastern Labs]

домашняя страница	http://www.cel.com

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Аналогичный номер детали - NE5510179A

производитель	номер детали	датащи	подробное описание детали
NEC	NE5510179A	39Kb / 4P	3.5V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
NEC	NE5510179A-T1	39Kb / 4P	3.5V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS

производитель	номер детали	датащи	подробное описание детали
Mitsubishi Electric Sem...	MA1046-1	26Kb / 1P	For 1.9 GHz - Power Amplifier
NEC	5510279A	390Kb / 4P	3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
	NE5510179A	39Kb / 4P	3.5V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
	NE5510279A	39Kb / 5P	3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
	NE552R679A	68Kb / 9P	3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
California Eastern Labs	NE5500179A	43Kb / 5P	4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND GSM1900 TRANSMISSION AMPLIFIERS
	NE5510279A	42Kb / 5P	3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
	NE5531079A	382Kb / 8P	7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
	NE552R479A-T1-A	605Kb / 7P	3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
Renesas Technology Corp	NE5531079A	240Kb / 11P	7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS