IRF840 pdf, IRF840 подробное описание детали, IRF840 датащи, IRF840 view ::: ALLDATASHEET :::

номер детали	IRF840

подробное описание детали	PowerMOS transistor Avalanche energy rated

объем файла	60.22 Kbytes

Html View	1 2 3 4 5 6 7

производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

Logo

Аналогичный номер детали - IRF840

производитель	номер детали	датащи	подробное описание детали
Motorola, Inc	IRF840	146Kb / 2P	N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
STMicroelectronics	IRF840	93Kb / 8P	N - CHANNEL 500V - 0.75ohm - 8A - TO-220 PowerMESH] MOSFET Aug-1998
Samsung semiconductor	IRF840	272Kb / 5P	N-CHANNEL POWER MOSFETS
Fairchild Semiconductor	IRF840	150Kb / 5P	N-Channel Power MOSFETs, 8A, 450 V/500V
Fairchild Semiconductor	IRF840	911Kb / 10P	500V N-Channel MOSFET

производитель	номер детали	датащи	подробное описание детали
NXP Semiconductors	IRF730	59Kb / 7P	PowerMOS transistor Avalanche energy rated March 1999 Rev 1.000
	IRF830	58Kb / 7P	PowerMOS transistor Avalanche energy rated March 1999 Rev 1.000
	PHP10N40E	115Kb / 7P	PowerMOS transistors Avalanche energy rated December 1998 Rev 1.000
	PHP11N50E	41Kb / 7P	PowerMOS transistors Avalanche energy rated January 1998 Rev 1.000
	PHP3N60E	79Kb / 9P	PowerMOS transistors Avalanche energy rated December 1998 Rev 1.200
	PHP7N40E	78Kb / 9P	PowerMOS transistors Avalanche energy rated December 1998 Rev 1.200
	PHX10N40E	74Kb / 8P	PowerMOS transistors Avalanche energy rated December 1998 Rev 1.200
	PHX3N60E	73Kb / 8P	PowerMOS transistors Avalanche energy rated December 1998 Rev 1.200
	PHX4N60E	75Kb / 8P	PowerMOS transistors Avalanche energy rated December 1998 Rev 1.200
	PHX8N50E	74Kb / 8P	PowerMOS transistors Avalanche energy rated December 1998 Rev 1.300