| производитель | номер детали | датащи | подробное описание детали |
VIGO Photonics S.A. |
PVI4TE6TO8-36-DTE
|
722Kb / 2P |
3.0 – 6.9 μm HgCdTe four-stage thermoelectrically cooled, optically immersed photovoltaic detector
25/09/2020 |
|
PVI-2TE-4-1
|
701Kb / 2P |
PVI-2TE-4-1×1-TO8-wAl2O3-36 2.4 – 4.3 μm HgCdTe two-stage thermoelectrically cooled, optically immersed photovoltaic detector
25/09/2020 |
|
LABM-I-5
|
762Kb / 2P |
2.9 – 5.5 μm and over 15 MHz HgCdTe programmable, laboratory IR detection module with optically immersed photovoltaic detector
01/10/2021 |
|
LABM-I-6
|
813Kb / 2P |
3.0 – 7.5 μm and over 200 MHz HgCdTe programmable, laboratory IR detection module with optically immersed photovoltaic detector
24/02/2021 |
|
NIPM-I-5
|
901Kb / 2P |
2.9 – 5.5 μm and over 1.8 MHz balanced / auto-balanced IR detection module with two HgCdTe thermoelectrically cooled, optically immersed photovoltaic detectors
21/12/2021 |
|
PVI-5-1
|
671Kb / 2P |
PVI-5-1×1-TO39-NW-36 2.4 – 5.5 μm HgCdTe ambient temperature, optically immersed photovoltaic detector
25/09/2020 |
|
UHSM-10.6
|
800Kb / 2P |
3.0 – 12.0 μm and over 1GHz HgCdTe ultra high speed IR detection module with photovoltaic detector
09/11/2020 |
|
UHSM-I-10.6
|
825Kb / 2P |
3.0 – 12.0 μm and over 700 MHz HgCdTe ultra high speed IR detection module with optically immersed photovoltaic detector
09/11/2020 |
|
UM-I-10.6
|
823Kb / 2P |
2.0 – 12.0 μm and DC – 100 MHz HgCdTe universal IR detection module with optically immersed photovoltaic multiple junction detector
09/11/2020 |
|
UM-I-6
|
825Kb / 2P |
3.0 – 6.7 μm and DC – 1 MHz HgCdTe universal IR detection module with optically immersed photovoltaic detector
14/09/2020 |
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