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номер детали	2SC4357

подробное описание детали	FOR HIGH CURRENT DRIVE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

объем файла	147.04 Kbytes

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производитель	ISAHAYA [Isahaya Electronics Corporation]

домашняя страница	http://www.idc-com.co.jp

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Аналогичный номер детали - 2SC4357

производитель	номер детали	датащи	подробное описание детали
Shindengen Electric Mfg...	2SC435	39Kb / 1P	POWER TRANSISTOR
Savantic, Inc.	2SC4350	93Kb / 3P	Silicon NPN Power Transistors
Quanzhou Jinmei Electro...	2SC4350	158Kb / 3P	Silicon NPN Power Transistors
Inchange Semiconductor ...	2SC4350	135Kb / 3P	Silicon NPN Power Transistors
Savantic, Inc.	2SC4350	100Kb / 3P	Silicon NPN Power Transistors

производитель	номер детали	датащи	подробное описание детали
Isahaya Electronics Cor...	2SC3443	141Kb / 4P	FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
List of Unclassifed Man...	2SC3728	70Kb / 2P	FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
List of Unclassifed Man...	2SC4356	149Kb / 4P	FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
Isahaya Electronics Cor...	2SC6053	83Kb / 4P	FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
	2SC6053	113Kb / 4P	FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
	INC5004AC1	237Kb / 2P	FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
	INC5005AC1	271Kb / 2P	FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
	INC5006AC1	115Kb / 2P	FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
	INC6008AC1	115Kb / 2P	FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
	ISC4356AS1	255Kb / 4P	FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE