2SC5761-T2 pdf, 2SC5761-T2 подробное описание детали, 2SC5761-T2 датащи, 2SC5761-T2 view ::: ALLDATASHEET :::

номер детали	2SC5761-T2

подробное описание детали	NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION

объем файла	305.1 Kbytes

Html View	1 2 3 4 5 6 7 8 9 Next

производитель	RENESAS [Renesas Technology Corp]

домашняя страница	http://www.renesas.com

Logo

Аналогичный номер детали - 2SC5761-T2

производитель	номер детали	датащи	подробное описание детали
NEC	2SC5761-T2	81Kb / 14P	NPN SiGe RF TRANSISTOR FOR LOW NOISE & HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

производитель	номер детали	датащи	подробное описание детали
NEC	NESG2046M33	118Kb / 3P	NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
	NESG204619	116Kb / 3P	NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
	NESG210719	114Kb / 3P	NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
California Eastern Labs	NESG2046M33	292Kb / 4P	NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
California Eastern Labs	NESG204619	320Kb / 4P	NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
Renesas Technology Corp	NESG2021M05	159Kb / 14P	NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
	NESG2031M05	158Kb / 14P	NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
	NESG3032M14	168Kb / 15P	NPN SiGe RF Transistor for Low Noise, High-Gain
	NESG3033M14	176Kb / 16P	NPN SiGe RF Transistor for Low Noise, High-Gain
	NESG210719	124Kb / 10P	NPN SiGe RF Transistor for Low Noise, High-Gain