| производитель | номер детали | датащи | подробное описание детали |
 Motorola, Inc |
MTW6N60E
|
69Kb / 2P |
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
|
MTD6N10
|
167Kb / 5P |
POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE, DPAK FOR SURFACE MOUNT OR INSERTION MOUNT
|
|
MTP2N20
|
176Kb / 5P |
POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE
|
|
MTH8N90
|
394Kb / 6P |
POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS
|
|
MTD2N20
|
191Kb / 6P |
POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE
|
 ON Semiconductor |
MTD6N15
|
88Kb / 8P |
Power Field Effect Transistor DPAK for Surface Mount
March, 2004 ??Rev. 2 |
 Motorola, Inc |
MTH8N40
|
385Kb / 5P |
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
|
MTE50N45
|
391Kb / 7P |
POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS
|
|
MTP15N05E
|
172Kb / 5P |
POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE
|
|
MTD3055E
|
223Kb / 6P |
TMOS IV N-Channel Enhancement-Mode Power Field Effect Transistor DPAK for Surface or Insertion Mount
|