| производитель | номер детали | датащи | подробное описание детали |
IXYS Corporation |
IXFC15N80Q
|
517Kb / 2P |
HiPerFET ISOPLUS 220 MOSFET Q-Class Electrically Isolated Back Surface
|
|
IXSR40N60BD1
|
39Kb / 2P |
IGBT with Diode ISOPLUS 247 (Electrically Isolated Backside)
|
|
IXGR60N60U1
|
118Kb / 5P |
LowV-CE(sat) IGBT with Diode ISOPLUS247-TM (Electrically Isolated Back Surface)
|
|
IXFR4N100Q
|
81Kb / 2P |
HiPerFET Power MOSFETs ISOPLUS247 (Electrically Isolated Backside)
|
|
IXFL34N100
|
117Kb / 2P |
HiPerFETTM Power MOSFETs ISOPLUS264(Electrically Isolated Backside)
|
|
IXER60N120
|
268Kb / 4P |
NPT3 IGBT in ISOPLUS 247
|
|
IXGR16N170AH1
|
528Kb / 2P |
High Voltage IGBT with Diode Electrically Isolated Tab
|
|
IXGR39N60B
|
519Kb / 2P |
HiPerFASTTM IGBT (Electrically Isolated Backside)
|
|
IXGR40N60B
|
58Kb / 2P |
HiPerFASTTM IGBT (Electrically Isolated Backside)
|
|
IXGR50N60A2U1
|
150Kb / 6P |
Low Saturation Voltage IGBT with Low Forward Drop Diode Electrically Isolated Mounting Tab
|
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