| производитель | номер детали | датащи | подробное описание детали |
IXYS Corporation |
IXBH9N140G
|
63Kb / 4P |
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
|
|
IXBH16N170A
|
51Kb / 2P |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
|
L412
|
91Kb / 4P |
High Voltage BIMOSFET
|
|
IXBH20N140
|
61Kb / 4P |
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
|
|
IXBH15N140
|
63Kb / 4P |
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
|
|
IXBH10N170
|
596Kb / 5P |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
|
IXBF12N300
|
207Kb / 5P |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
|
MMIX4B22N300
|
238Kb / 6P |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
|
IXBT20N360HV
|
286Kb / 6P |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
|
IXBT32N300HV
|
309Kb / 6P |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
Russian ▼ 
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand