| производитель | номер детали | датащи | подробное описание детали |
Intersil Corporation |
FSS913A0D
|
56Kb / 8P |
10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs
June 1999 |
|
JANSR2N7281
|
49Kb / 7P |
Radiation Hardened, N-Channel Power MOSFET
November 1998 |
International Rectifier |
IRHNA67160
|
184Kb / 8P |
RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2), 100V, N-CHANNEL
|
|
IRHM57064
|
173Kb / 8P |
RADIATION HARDENED POWER MOSFET
|
|
IRHG567110
|
182Kb / 14P |
RADIATION HARDENED POWER MOSFET THRU-HOLE 100V, Combination 2N-2P-CHANNEL
|
|
IRHF9230
|
141Kb / 8P |
RADIATION HARDENED POWER MOSFET
|
|
IRHMS57260SE
|
184Kb / 8P |
RADIATION HARDENED POWER MOSFET
|
|
IRHQ597110
|
181Kb / 8P |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) 100V, Quad P-CHANNEL
|
|
IRHM7250SE
|
140Kb / 8P |
RADIATION HARDENED POWER MOSFET
|
Solid States Devices, I... |
SFFR9160N
|
242Kb / 2P |
RADIATION HARDENED P-CHANNEL MOSFET
|
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