NE3512S02 pdf, NE3512S02 подробное описание детали, NE3512S02 датащи, NE3512S02 view ::: ALLDATASHEET :::

номер детали	NE3512S02

подробное описание детали	HETERO JUNCTION FIELD EFFECT TRANSISTOR

объем файла	270.66 Kbytes

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производитель	CEL [California Eastern Labs]

домашняя страница	http://www.cel.com

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Аналогичный номер детали - NE3512S02

производитель	номер детали	датащи	подробное описание детали
Renesas Technology Corp	NE3512S02	200Kb / 11P	C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
	NE3512S02-T1C	200Kb / 11P	C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
	NE3512S02-T1D	200Kb / 11P	C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

производитель	номер детали	датащи	подробное описание детали
California Eastern Labs	NE3514S02	285Kb / 8P	HETERO JUNCTION FIELD EFFECT TRANSISTOR
California Eastern Labs	NE3515S02-A	415Kb / 9P	HETERO JUNCTION FIELD EFFECT TRANSISTOR
Renesas Technology Corp	NE3210S01	197Kb / 18P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1999
	NE32484A	195Kb / 14P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1991
	NE32500	199Kb / 10P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1996
	NE32900	181Kb / 10P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1997
	NE32984D	207Kb / 14P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1995
	NE34018	250Kb / 18P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 2000
	NE38018	236Kb / 13P	Hetero Junction Field Effect transistor 2003
	NE21283A	718Kb / 12P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1990