| производитель | номер детали | датащи | подробное описание детали |
Hitachi Semiconductor |
HSB0104YP
|
27Kb / 5P |
Silicon Schottky Barrier Diode for High Speed Switching
|
KEC(Korea Electronics) |
KDR701S
|
384Kb / 2P |
SCHOTTKY BARRIER TYPE DIODE(FOR HIGH FREQUENCY RECTIFICATION)
|
Renesas Technology Corp |
HSU226
|
44Kb / 5P |
Silicon Schottky Barrier Diode for High Speed Switching
|
|
HSC285
|
46Kb / 5P |
SILICON SCHOTTKY BARRIER DIODE FOR HIGH FREQUENCY DETECTION
|
|
HSU285
|
40Kb / 5P |
Silicon Schottky Barrier Diode for High frequency detection
|
Toshiba Semiconductor |
JDH3D01FV
|
180Kb / 5P |
Diode Silicon Epitaxial Schottky Barrier Type For wave detection
|
|
JDH3D01S
|
168Kb / 4P |
Diode Silicon Epitaxial Schottky Barrier Type For wave detection
|
Hitachi Semiconductor |
HRW26
|
20Kb / 2P |
Silicon Schottky Barrier Diode for High Frequency Rectifying
|
Renesas Technology Corp |
RKD702KL
|
66Kb / 5P |
Silicon Schottky Barrier Diode for High Speed Switching
|
Leshan Radio Company |
LRB551V-30T1G
|
62Kb / 3P |
Schottky barrier diode High-frequency rectification
|
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