| производитель | номер детали | датащи | подробное описание детали |
Vishay Siliconix |
VT5200
|
148Kb / 5P |
Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A
14-Aug-13 |
|
V30100PW-M3
|
87Kb / 4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 8 A
20-Dec-13 |
|
VT1060C-E3
|
156Kb / 6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A
14-Dec-16 |
|
VT1060C-M3
|
133Kb / 5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A
15-Dec-16 |
|
VT5200-E3
|
146Kb / 6P |
Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A
12-Dec-16 |
|
VT10200C-M3
|
158Kb / 4P |
Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A
01-Dec-16 |
|
V20M120M-E3
|
98Kb / 4P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 5 A
11-May-16 |
|
VB10170C-E3
|
93Kb / 4P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 2.5 A
03-Jan-17 |
|
VBT1045C-E3
|
90Kb / 4P |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 2.5 A
09-Sep-13 |
|
VBT1060C-M3
|
89Kb / 4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A
14-May-13 |
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