UT4435G-S08-R pdf, UT4435G-S08-R подробное описание детали, UT4435G-S08-R датащи, UT4435G-S08-R view ::: ALLDATASHEET :::

номер детали	UT4435G-S08-R

подробное описание детали	P-Channel MOSFET uses advanced trench technology

объем файла	1166.34 Kbytes

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производитель	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

домашняя страница	http://www.doingter.cn/

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Аналогичный номер детали - UT4435G-S08-R

производитель	номер детали	датащи	подробное описание детали
SHENZHEN DOINGTER SEMIC...	AO4771	1Mb / 6P	P-Channel MOSFET uses advanced trench technology
	AOI409	1Mb / 4P	P-Channel MOSFET uses advanced trench technology
	AP3801GM-HF	935Kb / 5P	P-Channel MOSFET uses advanced trench technology
	AP9561AGM-HF	537Kb / 4P	P-Channel MOSFET uses advanced trench technology
	CEM4311	1Mb / 6P	P-Channel MOSFET uses advanced trench technology
	CJQ4435	1Mb / 4P	P-Channel MOSFET uses advanced trench technology
	STJ009	1Mb / 5P	P-Channel MOSFET uses advanced trench technology
	MTB040P04Q8	1Mb / 4P	P-Channel MOSFET uses advanced trench technology
	PE9435	1Mb / 5P	P-Channel MOSFET uses advanced trench technology
	QM3005S	1Mb / 5P	P-Channel MOSFET uses advanced trench technology