TPN11003NL pdf, TPN11003NL подробное описание детали, TPN11003NL датащи, TPN11003NL view ::: ALLDATASHEET :::

номер детали	TPN11003NL

подробное описание детали	N-Channel MOSFET uses advanced trench technology to minimize on-state resistance

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производитель	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

домашняя страница	http://www.doingter.cn/

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Аналогичный номер детали - TPN11003NL

производитель	номер детали	датащи	подробное описание детали
Toshiba Semiconductor	TPN11003NL	236Kb / 9P	MOSFETs Silicon N-channel MOS 2014-02-18 Rev.3.0

производитель	номер детали	датащи	подробное описание детали
SHENZHEN DOINGTER SEMIC...	ZC004TG	1Mb / 4P	N-Channel MOSFET uses advanced SGT to minimize on-state reistance
	ZC005TG	1Mb / 5P	N-Channel MOSFET uses advanced SGT to minimize on-state reistance
	AM20N06-90D	800Kb / 5P	N-Channel MOSFET uses advanced trench technology
	AM20N10-115D	4Mb / 4P	N-Channel MOSFET uses advanced trench technology
	AON7534	884Kb / 6P	N-Channel MOSFET uses advanced SGT to minimize on-state resistance
	MTB4D0N03BV8	2Mb / 5P	N-Channel MOSFET uses advanced SGT to minimize on-state resistance
	SIS456DN	1Mb / 5P	N-Channel MOSFET uses advanced SGT to minimize on-state reistance
	TPCC8062-H	2Mb / 5P	N-Channel MOSFET uses advanced trench SGT to minimize on-state resistance
	UPA2820T1S	1Mb / 5P	N-Channel MOSFET uses advanced SGT to minimize on-state resistance
	WSD3066DN	2Mb / 5P	N-Channel MOSFET uses advanced SGT to minimize on-state resistance