STP27N3LH5 pdf, STP27N3LH5 подробное описание детали, STP27N3LH5 датащи, STP27N3LH5 view ::: ALLDATASHEET :::

номер детали	STP27N3LH5

подробное описание детали	N-Channel MOSFET uses advanced trench technology

объем файла	1844.37 Kbytes

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производитель	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

домашняя страница	http://www.doingter.cn/

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Аналогичный номер детали - STP27N3LH5

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STP27N3LH5	1,021Kb / 21P	N-channel 30 V, 0.014, 27 A, DPAK, IPAK, TO-220 STripFET V Power MOSFET 07-Mar-2011
Inchange Semiconductor ...	STP27N3LH5	434Kb / 2P	isc N-Channel MOSFET Transistor

производитель	номер детали	датащи	подробное описание детали
SHENZHEN DOINGTER SEMIC...	AM20N06-90D	800Kb / 5P	N-Channel MOSFET uses advanced trench technology
	AM20N10-115D	4Mb / 4P	N-Channel MOSFET uses advanced trench technology
	AM40N20-180P	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
	AM50N03-12D	1Mb / 4P	N-Channel MOSFET uses advanced trench technology
	AM50N06-15D	2Mb / 5P	N-Channel MOSFET uses advanced trench technology
	AM70N04-06D	1Mb / 4P	N-Channel MOSFET uses advanced trench technology
	AM70N15-40P	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
	AM90N04-03P	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
	AM4492N	1Mb / 4P	N-Channel MOSFET uses advanced trench technology
	AM4910N	1Mb / 4P	N-Channel MOSFET uses advanced trench technology