SSG4910N pdf, SSG4910N подробное описание детали, SSG4910N датащи, SSG4910N view ::: ALLDATASHEET :::

номер детали	SSG4910N

подробное описание детали	N-Channel MOSFET uses advanced trench technology

объем файла	1436.91 Kbytes

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производитель	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

домашняя страница	http://www.doingter.cn/

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Аналогичный номер детали - SSG4910N

производитель	номер детали	датащи	подробное описание детали
SeCoS Halbleitertechnol...	SSG4910N	916Kb / 4P	Dual-N Enhancement Mode Power MOSFET
SeCoS Halbleitertechnol...	SSG4910N	919Kb / 4P	Dual-N Enhancement Mode Power MOSFET

производитель	номер детали	датащи	подробное описание детали
SHENZHEN DOINGTER SEMIC...	AM20N06-90D	800Kb / 5P	N-Channel MOSFET uses advanced trench technology
	AM20N10-115D	4Mb / 4P	N-Channel MOSFET uses advanced trench technology
	AM40N20-180P	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
	AM50N03-12D	1Mb / 4P	N-Channel MOSFET uses advanced trench technology
	AM50N06-15D	2Mb / 5P	N-Channel MOSFET uses advanced trench technology
	AM70N04-06D	1Mb / 4P	N-Channel MOSFET uses advanced trench technology
	AM70N15-40P	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
	AM90N04-03P	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
	AM4492N	1Mb / 4P	N-Channel MOSFET uses advanced trench technology
	AM4910N	1Mb / 4P	N-Channel MOSFET uses advanced trench technology