PE3010 pdf, PE3010 подробное описание детали, PE3010 датащи, PE3010 view ::: ALLDATASHEET :::

номер детали	PE3010

подробное описание детали	N-Channel MOSFET uses advanced trench technology

объем файла	1385.66 Kbytes

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производитель	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

домашняя страница	http://www.doingter.cn/

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Аналогичный номер детали - PE3010

производитель	номер детали	датащи	подробное описание детали
Pasternack Enterprises,...	PE3010	134Kb / 1P	CABLE ASSEMBLY RG58C/U UHF MALE TO DOUBLE BANANA PLUG
	PE3010-12	134Kb / 1P	cable assembly, rg58c/u, double banana plug to double banana plug
	PE3010-12	134Kb / 1P	cable assembly, rg58c/u, double banana plug to double banana plug
	PE3010-12	134Kb / 1P	cable assembly, rg58c/u, double banana plug to double banana plug
	PE3010-12	134Kb / 1P	cable assembly, rg58c/u, double banana plug to double banana plug

производитель	номер детали	датащи	подробное описание детали
SHENZHEN DOINGTER SEMIC...	AM20N06-90D	800Kb / 5P	N-Channel MOSFET uses advanced trench technology
	AM20N10-115D	4Mb / 4P	N-Channel MOSFET uses advanced trench technology
	AM40N20-180P	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
	AM50N03-12D	1Mb / 4P	N-Channel MOSFET uses advanced trench technology
	AM50N06-15D	2Mb / 5P	N-Channel MOSFET uses advanced trench technology
	AM70N04-06D	1Mb / 4P	N-Channel MOSFET uses advanced trench technology
	AM70N15-40P	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
	AM90N04-03P	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
	AM4492N	1Mb / 4P	N-Channel MOSFET uses advanced trench technology
	AM4910N	1Mb / 4P	N-Channel MOSFET uses advanced trench technology