IRFR320 pdf, IRFR320 подробное описание детали, IRFR320 датащи, IRFR320 view ::: ALLDATASHEET :::

номер детали	IRFR320

подробное описание детали	N-Channel MOSFET uses advanced trench technology

объем файла	1280.83 Kbytes

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производитель	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

домашняя страница	http://www.doingter.cn/

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Аналогичный номер детали - IRFR320

производитель	номер детали	датащи	подробное описание детали
Intersil Corporation	IRFR320	55Kb / 7P	3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs July 1999
International Rectifier	IRFR320	177Kb / 6P	Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=3.1A)
Vishay Siliconix	IRFR320	1Mb / 8P	Power MOSFET 21-Jul-08
Kersemi Electronic Co.,...	IRFR320	3Mb / 7P	Power MOSFET
Inchange Semiconductor ...	IRFR320	332Kb / 2P	iscN-Channel MOSFET Transistor

производитель	номер детали	датащи	подробное описание детали
SHENZHEN DOINGTER SEMIC...	AM20N06-90D	800Kb / 5P	N-Channel MOSFET uses advanced trench technology
	AM20N10-115D	4Mb / 4P	N-Channel MOSFET uses advanced trench technology
	AM40N20-180P	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
	AM50N03-12D	1Mb / 4P	N-Channel MOSFET uses advanced trench technology
	AM50N06-15D	2Mb / 5P	N-Channel MOSFET uses advanced trench technology
	AM70N04-06D	1Mb / 4P	N-Channel MOSFET uses advanced trench technology
	AM70N15-40P	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
	AM90N04-03P	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
	AM4492N	1Mb / 4P	N-Channel MOSFET uses advanced trench technology
	AM4910N	1Mb / 4P	N-Channel MOSFET uses advanced trench technology