IRFS640 pdf, IRFS640 подробное описание детали, IRFS640 датащи, IRFS640 view ::: ALLDATASHEET :::

номер детали	IRFS640

подробное описание детали	N-Channel MOSFET uses advanced trench technology

объем файла	1139.19 Kbytes

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производитель	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

домашняя страница	http://www.doingter.cn/

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Аналогичный номер детали - IRFS640

производитель	номер детали	датащи	подробное описание детали
Fairchild Semiconductor	IRFS640	916Kb / 10P	200V N-Channel MOSFET
Samsung semiconductor	IRFS640	308Kb / 5P	Improved inductive ruggedness
Foshan Blue Rocket Elec...	IRFS640	814Kb / 6P	N-CHANNEL MOSFET in a TO-220F Plastic Package
List of Unclassifed Man...	IRFS640	2Mb / 31P	SEMICONDUCTORS
Inchange Semiconductor ...	IRFS640	318Kb / 2P	isc N-Channel MOSFET Transistor

производитель	номер детали	датащи	подробное описание детали
SHENZHEN DOINGTER SEMIC...	AM20N06-90D	800Kb / 5P	N-Channel MOSFET uses advanced trench technology
	AM20N10-115D	4Mb / 4P	N-Channel MOSFET uses advanced trench technology
	AM40N20-180P	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
	AM50N03-12D	1Mb / 4P	N-Channel MOSFET uses advanced trench technology
	AM50N06-15D	2Mb / 5P	N-Channel MOSFET uses advanced trench technology
	AM70N04-06D	1Mb / 4P	N-Channel MOSFET uses advanced trench technology
	AM70N15-40P	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
	AM90N04-03P	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
	AM4492N	1Mb / 4P	N-Channel MOSFET uses advanced trench technology
	AM4910N	1Mb / 4P	N-Channel MOSFET uses advanced trench technology