IRF640 pdf, IRF640 подробное описание детали, IRF640 датащи, IRF640 view ::: ALLDATASHEET :::

номер детали	IRF640

подробное описание детали	N-Channel MOSFET uses advanced trench technology

объем файла	1943.36 Kbytes

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производитель	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

домашняя страница	http://www.doingter.cn/

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Аналогичный номер детали - IRF640

производитель	номер детали	датащи	подробное описание детали
NXP Semiconductors	IRF640	95Kb / 9P	N-channel TrenchMOS transistor August 1999 Rev 1.100
STMicroelectronics	IRF640	107Kb / 9P	N - CHANNEL 200V - 0.150ohm - 18A TO-220/TO-220FP MESH OVERLAY] MOSFET Oct-1999
Fairchild Semiconductor	IRF640	140Kb / 5P	N-Channel Power MOSFETs, 18A, 150-200V
	IRF640	132Kb / 7P	18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
	IRF640	916Kb / 10P	200V N-Channel MOSFET

производитель	номер детали	датащи	подробное описание детали
SHENZHEN DOINGTER SEMIC...	AM20N06-90D	800Kb / 5P	N-Channel MOSFET uses advanced trench technology
	AM20N10-115D	4Mb / 4P	N-Channel MOSFET uses advanced trench technology
	AM40N20-180P	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
	AM50N03-12D	1Mb / 4P	N-Channel MOSFET uses advanced trench technology
	AM50N06-15D	2Mb / 5P	N-Channel MOSFET uses advanced trench technology
	AM70N04-06D	1Mb / 4P	N-Channel MOSFET uses advanced trench technology
	AM70N15-40P	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
	AM90N04-03P	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
	AM4492N	1Mb / 4P	N-Channel MOSFET uses advanced trench technology
	AM4910N	1Mb / 4P	N-Channel MOSFET uses advanced trench technology