| производитель | номер детали | датащи | подробное описание детали |
 Motorola, Inc |
MGV12N120D
|
79Kb / 4P |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
|
|
MGW12N120D
|
250Kb / 6P |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
|
|
MGW20N60D
|
246Kb / 6P |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
|
|
MGY20N120D
|
254Kb / 6P |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
|
|
MGY25N120D
|
256Kb / 6P |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
|
|
MGY30N60D
|
254Kb / 6P |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
|
|
MGY40N60D
|
247Kb / 6P |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
|
 ON Semiconductor |
MGW12N120D
|
168Kb / 6P |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
1998 REV 2 |
|
MGY20N120D
|
171Kb / 6P |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
REV 1 |
|
MGY25N120D
|
171Kb / 6P |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
REV 2 |