NE552R479A pdf, NE552R479A подробное описание детали, NE552R479A датащи, NE552R479A view ::: ALLDATASHEET :::

номер детали	NE552R479A

подробное описание детали	NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET

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производитель	CEL [California Eastern Labs]

домашняя страница	http://www.cel.com

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Аналогичный номер детали - NE552R479A

производитель	номер детали	датащи	подробное описание детали
California Eastern Labs	NE552R479A	605Kb / 7P	3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
Renesas Technology Corp	NE552R479A	291Kb / 11P	SILICON POWER MOS FET 2003
California Eastern Labs	NE552R479A-T1	605Kb / 7P	3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
Renesas Technology Corp	NE552R479A-T1	291Kb / 11P	SILICON POWER MOS FET 2003
California Eastern Labs	NE552R479A-T1-A	605Kb / 7P	3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS

производитель	номер детали	датащи	подробное описание детали
California Eastern Labs	NE6510179A	285Kb / 10P	NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET 11/04/2002
NEC	NE5520279A	166Kb / 7P	NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
	UPG2179TB	248Kb / 9P	NECs 1.5W L, S-BAND SPDT SWITCH
	UPG2012TK	306Kb / 7P	NECs 쩌 W SINGLE CONTROL L, S-BAND SPDT SWITCH
	UPG2030TB	124Kb / 9P	NECs 1W L, S-BAND SPDT SWITCH
	UPG2006TB	265Kb / 10P	NECs 1.8 V L, S-BAND SPDT SWITCH
	NE5511279A-T1	99Kb / 3P	NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
California Eastern Labs	NE5520379A	390Kb / 9P	NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET
	NE5520279A	351Kb / 8P	3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
	NE5511279A-A	297Kb / 4P	NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET