| производитель | номер детали | датащи | подробное описание детали |
 NXP Semiconductors |
PSMN1R2-30YLC
|
351Kb / 15P |
N-channel 30 V 1.25m廓 logic level MOSFET in LFPAK using NextPower technology
Rev. 1-3 May 2011 |
|
PSMN2R2-30YLC
|
354Kb / 15P |
N-channel 30 V 2.15m廓 logic level MOSFET in LFPAK using NextPower technology
Rev. 02-3 May 2011 |
|
PSMN2R6-30YLC
|
351Kb / 15P |
N-channel 30 V 2.8m廓 logic level MOSFET in LFPAK using NextPower technology
Rev. 01-2 May 2011 |
|
PSMN1R6-40YLC
|
239Kb / 14P |
N-channel 40 V 1.55 m廓 logic level MOSFET in LFPAK using NextPower technology
22 August 2012 |
|
PSMN1R8-40YLC
|
241Kb / 14P |
N-channel 40 V 1.8 m廓 logic level MOSFET in LFPAK using NextPower technology
22 August 2012 |
|
PSMN3R7-30YLC
|
354Kb / 15P |
N-channel 30 V 3.95m廓 logic level MOSFET in LFPAK using NextPower technology
Rev. 01-2 May 2011 |
|
PSMN1R6-40YLC
|
239Kb / 14P |
N-channel 40 V 1.55 m廓 logic level MOSFET in LFPAK using NextPower technology
22 August 2012 |
|
PSMN1R8-40YLC
|
241Kb / 14P |
N-channel 40 V 1.8 m廓 logic level MOSFET in LFPAK using NextPower technology
22 August 2012 |
|
PSMN4R1-30YLC
|
323Kb / 14P |
N-channel 30 V 4.35m廓 logic level MOSFET in LFPAK using NextPower technology
12 February 2013 |
|
PSMN1R5-30YLC
|
355Kb / 15P |
N-channel 30 V 1.55m廓 logic level MOSFET in LFPAK using NextPower technology
Rev. 2-17 May 2011 |