| производитель | номер детали | датащи | подробное описание детали |
 NXP Semiconductors |
PDTA123E
|
189Kb / 14P |
PNP resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓
2004 Aug 02 |
|
PDTA123J
|
181Kb / 14P |
PNP resistor-equipped transistors; R1 = 2.2 k廓, R2 = 47 k廓
2004 Aug 02 |
 Nexperia B.V. All right... |
PDTA113ZMB
|
628Kb / 13P |
PNP resistor-equipped transistor; R1 = 1 k廓, R2 = 10 k廓
|
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PDTA114EMB
|
845Kb / 12P |
PNP resistor-equipped transistor; R1 = 10 k廓, R2 = 10 k廓
|
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PDTA114YMB
|
842Kb / 12P |
PNP resistor-equipped transistor; R1 = 10 k廓, R2 = 47 k廓
|
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PDTA123EMB
|
836Kb / 13P |
PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 2.2 k廓
|
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PDTA123JMB
|
842Kb / 12P |
PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 47 k廓
|
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PDTA143XMB
|
962Kb / 12P |
PNP resistor-equipped transistor; R1 = 4.7 k廓, R2 = 10 k廓
|
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PDTC123EMB
|
960Kb / 13P |
NPN resistor-equipped transistor; R1 = 2.2 k廓, R2 = 2.2 k廓
|
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PDTC123YMB
|
749Kb / 12P |
NPN resistor-equipped transistor; R1 = 2.2 k廓, R2 = 10 k廓
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