| производитель | номер детали | датащи | подробное описание детали |
 Solid States Devices, I... |
SSR10C30
|
142Kb / 2P |
10A / 300V Schottky Silicon Carbide
|
 KIA Semiconductor Techn... |
10N65H
|
300Kb / 5P |
10A竊?50V N-CHANNEL MOSFET
|
|
06065A
|
64Kb / 3P |
6A竊?50V Silicon Carbide Diode
|
|
08065A
|
66Kb / 3P |
8A竊?50V Silicon Carbide Diode
|
|
KNX6165A
|
184Kb / 7P |
10A竊?50V N-CHANNEL MOSFET
|
 Cree, Inc |
E4D20120G
|
2Mb / 6P |
Silicon Carbide Schottky Diode Silicon Carbide Schottky Diode
|
 Rectron Semiconductor |
SC2S17010A
|
460Kb / 5P |
1700V/ 10ASiliconCarbidePowerSchottkyBarrierDiode
|
|
SC3S06510A
|
384Kb / 5P |
650V/10ASiliconCarbidePowerSchottkyBarrierDiode
|
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SC3S12010A
|
322Kb / 5P |
1200V/10A Silicon Carbide Power Schottky Barrier Diode
|
|
SC3S12010B
|
572Kb / 5P |
1200V/10A Silicon Carbide Power Schottky Barrier Diode
|